RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Faster reading speed, GB/s
16
14.5
Average value in the tests
Faster write speed, GB/s
12.5
10.4
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
14.5
Write speed, GB/s
12.5
10.4
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2429
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Corsair CMR16GX4M2C3600C18 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
G Skill Intl F3-1600C11-4GIS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N
Kingston 9965525-144.A00LF 8GB
Kingston 9905624-043.A00G 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BL8G26C16S4B.8FD 8GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK32GX4M4Z3200C16 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
G Skill Intl F4-2800C17-8GIS 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMD32GX4M2C3200C14M 16GB
PUSKILL DDR3 1600 8G 8GB
Samsung M471A1K43CB1-CRCR 8GB
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HMA82GU6MFR8N-TF 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Mushkin MR[A/B]4U360JNNM8G 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMR16GX4M2C 8GB
Kingston K1N7HK-ELC 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
A-DATA Technology DDR3 1600 4GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Report a bug
×
Bug description
Source link