RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Report a bug
Faster reading speed, GB/s
16.2
16
Average value in the tests
Faster write speed, GB/s
12.7
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
16.2
Write speed, GB/s
12.5
12.7
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2417
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5273CH0-CH9 4GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Kingston 9905471-002.A00LF 2GB
Kingston X5H5PW-MIB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMSO32GX4M2A2133C15 16GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3000C15-4GVSB 4GB
Unifosa Corporation HU564404EP0200 4GB
Corsair CMW16GX4M2K4266C19 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-2666C19-8GRS 8GB
Kingston 9905403-134.A00LF 2GB
Samsung M471A2K43BB1-CTD 16GB
Samsung DDR3 8GB 1600MHz 8GB
Mushkin MR[A/B]4U320LLLM16G 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston KHX426C13/8G 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston KHX3200C18D4/8G 8GB
Samsung M393B5170FH0-CK0 4GB
Samsung M378A4G43MB1-CTD 32GB
Report a bug
×
Bug description
Source link