RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 4ATF51264AZ-2G3E1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 4ATF51264AZ-2G3E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Faster reading speed, GB/s
16
15
Average value in the tests
Faster write speed, GB/s
12.5
10.9
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264AZ-2G3E1 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
16.0
15.0
Write speed, GB/s
12.5
10.9
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2288
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 4ATF51264AZ-2G3E1 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 4ATF51264AZ-2G3E1 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9965643-002.A01G 4GB
AMD R5316G1609U2K 8GB
Apacer Technology GD2.1831WS.002 16GB
Kingston 99U5584-005.A00LF 4GB
V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
Crucial Technology CT2K102464BD160B 8GB
Kingston 9965525-018.A00LF 4GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
takeMS International AG TMS2GB264D081-805U 2GB
Kingston 99U5711-001.A00G 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA451U7MFR8N-TF 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
AMD R538G1601U2S-UO 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C14-8GTZR 8GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
Report a bug
×
Bug description
Source link