RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Netac Technology Co Ltd EKBLACK4083016A 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Netac Technology Co Ltd EKBLACK4083016A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Netac Technology Co Ltd EKBLACK4083016A 8GB
Report a bug
Below the latency in the PassMark tests, ns
20
24
Around -20% lower latency
Faster reading speed, GB/s
19.7
16
Average value in the tests
Faster write speed, GB/s
15.5
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
20
Read speed, GB/s
16.0
19.7
Write speed, GB/s
12.5
15.5
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3404
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Netac Technology Co Ltd EKBLACK4083016A 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Netac Technology Co Ltd EKBLACK4083016A 8GB
AMD R538G1601U2S-UO 8GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M393B2G70BH0-CH9 16GB
Essencore Limited KD4AGSA8A-32N2200 16GB
A-DATA Technology DDR3 1333G 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 99U5701-003.A00G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited IM48GU88A30-FGGHMZ 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2133C15-4GNT 4GB
Samsung M378B5273CH0-CH9 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMW8GX4M1D3000C16 8GB
Team Group Inc. UD5-6400 16GB
Apacer Technology 78.CAGPL.ARC0B 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2800C16-8GRK 8GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3000C16-16GRS 16GB
A-DATA Technology DQVE1908 512MB
Samsung M47472K43DB1-CTD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A5244CB0-CTD 4GB
Report a bug
×
Bug description
Source link