RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A1K43DB2-CVF 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A1K43DB2-CVF 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M378A1K43DB2-CVF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
30
Around 20% lower latency
Faster reading speed, GB/s
16
15.2
Average value in the tests
Faster write speed, GB/s
12.5
11.8
Average value in the tests
Reasons to consider
Samsung M378A1K43DB2-CVF 8GB
Report a bug
Higher memory bandwidth, mbps
23400
19200
Around 1.22 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A1K43DB2-CVF 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
30
Read speed, GB/s
16.0
15.2
Write speed, GB/s
12.5
11.8
Memory bandwidth, mbps
19200
23400
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
2925
2913
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M378A1K43DB2-CVF 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A1K43DB2-CVF 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston 9905624-045.A00G 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston MSI24D4U7D8MD-16 16GB
Kingston KHX1866C10D3/4G 4GB
Kingston XK2M26-MIE 16GB
Corsair CMY16GX3M4A2133C8 4GB
G Skill Intl F4-3466C16-8GTZR 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMU32GX4M2C3000C15 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-16GTZR 16GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMW32GX4M4A2666C16 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK16GX4M2B2800C14 8GB
Report a bug
×
Bug description
Source link