RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M471A2K43EB1-CTD 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M471A2K43EB1-CTD 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M471A2K43EB1-CTD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
34
Around 29% lower latency
Faster reading speed, GB/s
16
15.3
Average value in the tests
Faster write speed, GB/s
12.5
11.7
Average value in the tests
Reasons to consider
Samsung M471A2K43EB1-CTD 16GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M471A2K43EB1-CTD 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
34
Read speed, GB/s
16.0
15.3
Write speed, GB/s
12.5
11.7
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2962
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M471A2K43EB1-CTD 16GB RAM comparisons
Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A2K43EB1-CTD 16GB
Kingston 9905403-447.A00LF 4GB
Kingston 9905713-008.A00G 4GB
Qimonda 72T128420EFA3SB2 1GB
Samsung M391A2K43BB1-CRC 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMD8GX4M2B3600C18 4GB
Corsair CMX4GX3M1A1333C9 4GB
Kingston 9965596-019.B01G 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3300C16-4GRKD 4GB
Kingston KHX318C10FR/8G 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CM4X4GF2133C15S2 4GB
Samsung M3 78T3354BZ0-CCC 256MB
AMD R744G2133U1S 4GB
Samsung M378B5273DH0-CH9 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Kingston 99U5469-045.A00LF 4GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Report a bug
×
Bug description
Source link