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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung V-GeN D4S16GL26A8TL6 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung V-GeN D4S16GL26A8TL6 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
32
Around 25% lower latency
Reasons to consider
Samsung V-GeN D4S16GL26A8TL6 16GB
Report a bug
Faster write speed, GB/s
13.4
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
32
Read speed, GB/s
16.0
16.0
Write speed, GB/s
12.5
13.4
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
1897
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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