RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Faster reading speed, GB/s
17.2
16
Average value in the tests
Faster write speed, GB/s
13.0
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
17.2
Write speed, GB/s
12.5
13.0
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
3004
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-003.B00LF 4GB
G Skill Intl F4-2933C16-16GFX 16GB
Samsung M471B5273DH0-CH9 4GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
Corsair CM3X8GA2400C11Y2R 8GB
Apacer Technology 78.C2GFP.C700B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gloway International (HK) STK4U2400D17081C 8GB
Kingston 99P5471-002.A00LF 2GB
Kingston KF3200C16D4/16GX 16GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK16GX4M2Z3600C14 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905678-139.A00G 8GB
PNY Electronics PNY 2GB
Samsung M391A1G43EB1-CRC 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston KF3600C18D4/32GX 32GB
Samsung M393B2G70AH0-YH9 16GB
Corsair CMK8GX4M1D2666C16 8GB
Kingston KHX2800C14D4/8GX 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
Kingston 99U5428-040.A00LF 4GB
G Skill Intl F4-3200C18-16GRS 16GB
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Report a bug
×
Bug description
Source link