PNY Electronics PNY 2GB vs Samsung M391A1G43EB1-CRC 8GB

Overall score

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB

Reasons to consider
PNY Electronics PNY 2GB

Below the latency in the PassMark tests, ns

27 77

Around 65% lower latency
Faster reading speed, GB/s

13.8 13.6

Average value in the tests
Faster write speed, GB/s

8.4 6.9

Average value in the tests

Samsung M391A1G43EB1-CRC 8GB

Reasons to consider
Samsung M391A1G43EB1-CRC 8GB

Higher memory bandwidth, mbps

19200 10600

Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications

PNY Electronics PNY 2GB

Samsung M391A1G43EB1-CRC 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

27 77
Read speed, GB/s

13.8 13.6
Write speed, GB/s

8.4 6.9
Memory bandwidth, mbps

10600 19200

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2274 1549

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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