RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HMA82GU6DJR8N-XN 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs SK Hynix HMA82GU6DJR8N-XN 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
SK Hynix HMA82GU6DJR8N-XN 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
32
Around 25% lower latency
Faster reading speed, GB/s
16
15.7
Average value in the tests
Reasons to consider
SK Hynix HMA82GU6DJR8N-XN 16GB
Report a bug
Faster write speed, GB/s
13.2
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HMA82GU6DJR8N-XN 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
32
Read speed, GB/s
16.0
15.7
Write speed, GB/s
12.5
13.2
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
3247
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
SK Hynix HMA82GU6DJR8N-XN 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3000C15-16GVR 16GB
A-DATA Technology DOVF1B163G2G 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GU6DJR8N-XN 16GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology CB4GU2400.M8E 4GB
Samsung M471B5173QH0-YK0 4GB
Samsung M393A1K43BB1-CTD 8GB
Kingston 99P5471-024.A00LF 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Corsair CMK8GX4M2B3600C18 4GB
Kingston KHX1600C9S3L/8G 8GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Apacer Technology GD2.1527WT.001 8GB
A-DATA Technology DDR3 1333G 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
Samsung 1600 CL10 Series 8GB
Corsair CMW32GX4M4C3200C16 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Samsung M378B5673EH1-CF8 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Report a bug
×
Bug description
Source link