RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Faster reading speed, GB/s
16
14.9
Average value in the tests
Faster write speed, GB/s
12.5
8.4
Average value in the tests
Reasons to consider
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
16.0
14.9
Write speed, GB/s
12.5
8.4
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2373
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3000C15-8GRK 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kllisre M471A1K43CB1-CTD 8GB
Qimonda 72T128420EFA3SB2 1GB
Teikon TMA451S6AFR8N-TFSC 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4000C17-16GTZRB 16GB
Team Group Inc. Team-Elite-1333 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965640-008.A01G 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Kingston 9905471-071.A00LF 8GB
Apacer Technology 78.CAGP7.40C0B 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Kingston KHX1600C9D3/8G 8GB
Samsung M378A1G43EB1-CRC 8GB
Kingston 99U5584-017.A00LF 4GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Kingston 99U5403-036.A00G 4GB
Corsair CMD64GX4M4B2800C14 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Corsair CMY8GX3M2A2666C10 4GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Report a bug
×
Bug description
Source link