RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Compare
Kingmax Semiconductor KLDD48F-B8KU5 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Overall score
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Report a bug
Faster reading speed, GB/s
3
20.4
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
18
61
Around -239% lower latency
Faster write speed, GB/s
17.2
1,670.4
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
61
18
Read speed, GB/s
3,529.3
20.4
Write speed, GB/s
1,670.4
17.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
517
3814
Kingmax Semiconductor KLDD48F-B8KU5 1GB RAM comparisons
Kingmax Semiconductor KLDD48F-A8KB5 1GB
Patriot Memory (PDP Systems) PSD21G800816 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-2400C15-16GFT 16GB
Samsung M471B5773DH0-CH9 2GB
Corsair CM4B8G2J2400A14K 8GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology CT16G4SFD8266 16GB
Samsung M3 78T5663RZ3-CE6 2GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology DDR4 3333 2OZ 4GB
Kingston 9965525-140.A00LF 8GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
Kingston 99U5474-013.A00LF 2GB
Corsair CMK64GX4M2Z4000C18 32GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
AMD R5316G1609U2K 8GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston 9905598-039.A00G 16GB
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Report a bug
×
Bug description
Source link