RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 39P5429-006.AO01 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Compare
Kingston 39P5429-006.AO01 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Overall score
Kingston 39P5429-006.AO01 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston 39P5429-006.AO01 2GB
Report a bug
Faster reading speed, GB/s
6
12.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
44
Around -52% lower latency
Faster write speed, GB/s
9.6
1,892.9
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Kingston 39P5429-006.AO01 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
44
29
Read speed, GB/s
6,181.5
12.2
Write speed, GB/s
1,892.9
9.6
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
851
2443
Kingston 39P5429-006.AO01 2GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB
G Skill Intl F4-3200C16-32GTRG 32GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Samsung M378A1G43EB1-CRC 8GB
AMD AE34G1601U1 4GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Samsung M391B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-2400C15-4GVR 4GB
AMD AE34G2139U2 4GB
G Skill Intl F4-2400C15-16GVR 16GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905712-035.A00G 16GB
SK Hynix HMT451U6BFR8A-PB 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3200C15-16GTZKW 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
Kingston ACR16D3LS1KBG/8G 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KP6FH5-MIE 32GB
AMD R5S38G1601U2S 8GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Report a bug
×
Bug description
Source link