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Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-2666C18-8GFT 8GB

Kingston 99U5429-007.A00LF 2GB vs G Skill Intl F4-2666C18-8GFT 8GB

Overall score
star star star star star
Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Overall score
star star star star star
G Skill Intl F4-2666C18-8GFT 8GB

G Skill Intl F4-2666C18-8GFT 8GB

Differences Specifications Comments

Differences

Kingston 99U5429-007.A00LF 2GB Reasons to consider
Kingston 99U5429-007.A00LF 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    75 left arrow 79
    Around 5% lower latency
  • Faster reading speed, GB/s
    3 left arrow 14.1
    Average value in the tests
G Skill Intl F4-2666C18-8GFT 8GB Reasons to consider
G Skill Intl F4-2666C18-8GFT 8GB
Report a bug
  • Faster write speed, GB/s
    7.3 left arrow 2,036.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-2666C18-8GFT 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    75 left arrow 79
  • Read speed, GB/s
    3,986.4 left arrow 14.1
  • Write speed, GB/s
    2,036.1 left arrow 7.3
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    714 left arrow 1651

Kingston 99U5429-007.A00LF 2GB RAM comparisons

Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

G Skill Intl F4-2666C18-8GFT 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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