RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston ACR256X64D3S1333C9 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Compare
Kingston ACR256X64D3S1333C9 2GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Overall score
Kingston ACR256X64D3S1333C9 2GB
Overall score
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston ACR256X64D3S1333C9 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
28
Around 4% lower latency
Reasons to consider
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Report a bug
Faster reading speed, GB/s
18.1
11.9
Average value in the tests
Faster write speed, GB/s
15.6
8.5
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Kingston ACR256X64D3S1333C9 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
28
Read speed, GB/s
11.9
18.1
Write speed, GB/s
8.5
15.6
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1620
3693
Kingston ACR256X64D3S1333C9 2GB RAM comparisons
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
AMD R5316G1609U2K 8GB
Corsair CMK32GX4M4C3000C15 8GB
Kingston ACR256X64D3S1333C9 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Kingston ACR16D3LS1NGG/2G 2GB
Gloway International (HK) STK4U2400D17082C 8GB
Samsung M378B5673FH0-CH9 2GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Mushkin 991988 (996988) 4GB
AMD R748G2400U2S-UO 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston HP24D4U7S8MD-8 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Shenzhen Xingmem Technology Corp 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2666C15-8GVS 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology CB16GS2400.C16J 16GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Kingston 9905403-061.A00LF 2GB
A-DATA Technology DDR4 2400 16GB
Report a bug
×
Bug description
Source link