RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston HP536727-H41-ELD 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Kingston HP536727-H41-ELD 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Kingston HP536727-H41-ELD 4GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston HP536727-H41-ELD 4GB
Report a bug
Below the latency in the PassMark tests, ns
51
71
Around 28% lower latency
Faster write speed, GB/s
8.1
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster reading speed, GB/s
15.6
11.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Kingston HP536727-H41-ELD 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
51
71
Read speed, GB/s
11.6
15.6
Write speed, GB/s
8.1
6.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1540
1650
Kingston HP536727-H41-ELD 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston KYXC0V-MIB 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston KHX2666C16D4/32GX 32GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905630-007.A00G 8GB
Samsung M471B1G73QH0-YK0 8GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
Kingston HP536727-H41-ELD 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMT16GX4M2K4266C19 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G36C16U4W.M8FE1 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Avant Technology J642GU42J5213N2 16GB
Samsung M471A1K43CB1-CRC 8GB
A-DATA Technology DQVE1908 512MB
Corsair CMRX8GD3000C16R4D 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Neo Forza NMUD480E86-3200 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
Report a bug
×
Bug description
Source link