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Kingston KVR533D2N4 512MB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Kingston KVR533D2N4 512MB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Overall score
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Overall score
star star star star star
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Differences Specifications Comments

Differences

Kingston KVR533D2N4 512MB Reasons to consider
Kingston KVR533D2N4 512MB
Report a bug
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB Reasons to consider
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 75
    Around -134% lower latency
  • Faster reading speed, GB/s
    19.4 left arrow 1
    Average value in the tests
  • Faster write speed, GB/s
    16.3 left arrow 1,672.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 4200
    Around 5.07 higher bandwidth

Specifications

Complete list of technical specifications
Kingston KVR533D2N4 512MB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    75 left arrow 32
  • Read speed, GB/s
    1,943.5 left arrow 19.4
  • Write speed, GB/s
    1,672.1 left arrow 16.3
  • Memory bandwidth, mbps
    4200 left arrow 21300
Other
  • Description
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    4-4-4-12 / 533 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    301 left arrow 3726

Kingston KVR533D2N4 512MB RAM comparisons

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Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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RAM Latency Calculator
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