Kingston KVR533D2N4 512MB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 75

左右 -134% 更低的延时
更快的读取速度，GB/s

19.4 1

测试中的平均数值
更快的写入速度，GB/s

16.3 1,672.1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 32
读取速度，GB/s

1,943.5 19.4
写入速度，GB/s

1,672.1 16.3
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

301 3726

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-4GTZB 4GB

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Apacer Technology 78.BAGMD.AF20B 4GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

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Corsair CMW64GX4M2D3600C18 32GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

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Micron Technology CT8G4DFD8213.16FA11 8GB

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Corsair CMK32GX5M2A4800C40 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB