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Kingston KVR800D2N6/2G 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Compare
Kingston KVR800D2N6/2G 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Overall score
Kingston KVR800D2N6/2G 2GB
Overall score
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston KVR800D2N6/2G 2GB
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Faster reading speed, GB/s
5
18.1
Average value in the tests
Reasons to consider
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
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Below the latency in the PassMark tests, ns
23
50
Around -117% lower latency
Faster write speed, GB/s
15.0
1,905.1
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Kingston KVR800D2N6/2G 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
23
Read speed, GB/s
5,143.3
18.1
Write speed, GB/s
1,905.1
15.0
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
855
3317
Kingston KVR800D2N6/2G 2GB RAM comparisons
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Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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