RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Compare
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Crucial Technology CT16G4SFD824A.M16FB 16GB
Overall score
Lexar Co Limited LD4AU016G-H3200GST 16GB
Overall score
Crucial Technology CT16G4SFD824A.M16FB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
38
Around 13% lower latency
Faster reading speed, GB/s
17.8
14.8
Average value in the tests
Faster write speed, GB/s
12.5
10.9
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Crucial Technology CT16G4SFD824A.M16FB 16GB
Report a bug
Specifications
Complete list of technical specifications
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
38
Read speed, GB/s
17.8
14.8
Write speed, GB/s
12.5
10.9
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3285
2536
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFD824A.M16FB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Samsung M378A5143EB1-CPB 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 16GB 2133MHz DIMM 16GB
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Kingston 9905403-447.A00LF 4GB
Essencore Limited IM48GU88N24-FFFHMB 8GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-4000C19-16GTZR 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
Kingston 9905403-156.A00LF 2GB
Apacer Technology 78.BAGNF.40C0B 4GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
Micron Technology 16G3200CL22 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology D12.2326WH.001 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Kingston 99U5584-017.A00LF 4GB
G Skill Intl F4-3200C16-8GTZR 8GB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA82GR8AMR4N-TF 16GB
Report a bug
×
Bug description
Source link