RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JSF25664HZ-1G1F1 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Compare
Micron Technology 16JSF25664HZ-1G1F1 2GB vs Chun Well Technology Holding Limited D4U0826190B 8GB
Overall score
Micron Technology 16JSF25664HZ-1G1F1 2GB
Overall score
Chun Well Technology Holding Limited D4U0826190B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JSF25664HZ-1G1F1 2GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited D4U0826190B 8GB
Report a bug
Faster reading speed, GB/s
16.7
10.5
Average value in the tests
Faster write speed, GB/s
12.9
7.1
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JSF25664HZ-1G1F1 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
29
Read speed, GB/s
10.5
16.7
Write speed, GB/s
7.1
12.9
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1425
3273
Micron Technology 16JSF25664HZ-1G1F1 2GB RAM comparisons
Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JSF25664HZ-1G1F1 2GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Kingston 9905471-076.A00LF 8GB
Kingston 9905678-139.A00G 8GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMK16GX4M2L3200C16 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Samsung M378B5273DH0-CH9 4GB
Corsair CMR16GX4M2C3000C16 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston MSI24D4S7D8MB-16 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
A-DATA Technology AM2U16BC4P2-B05B 4GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
EVGA 8GX-D4-3000-MR 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Kingston 9905734-063.A00G 32GB
Report a bug
×
Bug description
Source link