RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JSF25664HZ-1G1F1 2GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Compare
Micron Technology 16JSF25664HZ-1G1F1 2GB vs Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Overall score
Micron Technology 16JSF25664HZ-1G1F1 2GB
Overall score
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JSF25664HZ-1G1F1 2GB
Report a bug
Below the latency in the PassMark tests, ns
29
32
Around 9% lower latency
Reasons to consider
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Report a bug
Faster reading speed, GB/s
16.8
10.5
Average value in the tests
Faster write speed, GB/s
15.4
7.1
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JSF25664HZ-1G1F1 2GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
32
Read speed, GB/s
10.5
16.8
Write speed, GB/s
7.1
15.4
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1425
3579
Micron Technology 16JSF25664HZ-1G1F1 2GB RAM comparisons
Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5273DH0-CH9 4GB
Essencore Limited IM44GU48N26-GIIHA0 4GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-4133C19-8GTZC 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-2666C15-8GRKB 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3600C16-8GTZ 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston KHX4266C19D4/8GX 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
Samsung M378B5273CH0-CH9 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMK32GX4M4B3600C18 8GB
Samsung M393B2G70BH0-CH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
Kingston KVR533D2N4 512MB
Kingston KHX3200C16D4/4GX 4GB
Qimonda 72T128420EFA3SB2 1GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CMSX16GX4M2A2400C16 8GB
Kingston KHX1600C9S3L/4G 4GB
Kingston KGTWW1-MIE 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9965600-033.A00G 16GB
Report a bug
×
Bug description
Source link