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Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M378A1K43EB2-CWE 8GB
Compare
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M378A1K43EB2-CWE 8GB
Overall score
Micron Technology 16JTF51264HZ-1G6M1 4GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
33
Around 15% lower latency
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Faster reading speed, GB/s
17.6
12.9
Average value in the tests
Faster write speed, GB/s
12.0
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M378A1K43EB2-CWE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
33
Read speed, GB/s
12.9
17.6
Write speed, GB/s
9.0
12.0
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2112
2910
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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