Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M471A1K43CBCBCRC 8GB

Overall score

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Overall score

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

Differences Specifications Comments

Differences

Micron Technology 16JTF51264HZ-1G6M1 4GB

Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB

Below the latency in the PassMark tests, ns

28 38

Around 26% lower latency
Faster reading speed, GB/s

12.9 9.3

Average value in the tests
Faster write speed, GB/s

9.0 6.1

Average value in the tests

Samsung M471A1K43CBCBCRC 8GB

Reasons to consider
Samsung M471A1K43CBCBCRC 8GB

Higher memory bandwidth, mbps

19200 12800

Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M471A1K43CBCBCRC 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

28 38
Read speed, GB/s

12.9 9.3
Write speed, GB/s

9.0 6.1
Memory bandwidth, mbps

12800 19200

Other

Description

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2112 1493

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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