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Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung V-GeN D4S8GL26A8TL5 8GB

Overall score
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Overall score
star star star star star
Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Differences Specifications Comments

Differences

Micron Technology 16JTF51264HZ-1G6M1 4GB Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
Samsung V-GeN D4S8GL26A8TL5 8GB Reasons to consider
Samsung V-GeN D4S8GL26A8TL5 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    22 left arrow 28
    Around -27% lower latency
  • Faster reading speed, GB/s
    18 left arrow 12.9
    Average value in the tests
  • Faster write speed, GB/s
    12.8 left arrow 9.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 22
  • Read speed, GB/s
    12.9 left arrow 18.0
  • Write speed, GB/s
    9.0 left arrow 12.8
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2112 left arrow 3110

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons

SK Hynix HMT351S6CFR8C-PB 4GB
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Samsung V-GeN D4S8GL26A8TL5 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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