RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 18HTF12872AY-800F1 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Compare
Micron Technology 18HTF12872AY-800F1 1GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Micron Technology 18HTF12872AY-800F1 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 18HTF12872AY-800F1 1GB
Report a bug
Faster reading speed, GB/s
4
15.6
Average value in the tests
Faster write speed, GB/s
2,107.0
12.1
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
58
Around -142% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 18HTF12872AY-800F1 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
24
Read speed, GB/s
4,025.3
15.6
Write speed, GB/s
2,107.0
12.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
670
2852
Micron Technology 18HTF12872AY-800F1 1GB RAM comparisons
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 18HTF12872AY-800F1 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905678-033.A00G 4GB
A-DATA Technology DQKD1A08 1GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung M471A2G43AB2-CWE 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMK128GX4M8A2666C16 16GB
AMD AE34G1601U1 4GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
Corsair CMD16GX3M2A1866C9 8GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Elpida EBJ41UF8BDW0-GN-F 4GB
Kingston 9965596-029.B00G 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMT16GX4M2Z3200C16 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Kingston KN2M64-ETB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Team Group Inc. ZEUS-2133 8GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
Report a bug
×
Bug description
Source link