RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 18HTF12872AY-800F1 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
比较
Micron Technology 18HTF12872AY-800F1 1GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
总分
Micron Technology 18HTF12872AY-800F1 1GB
总分
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
更快的读取速度,GB/s
4
15.6
测试中的平均数值
更快的写入速度,GB/s
2,107.0
12.1
测试中的平均数值
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
58
左右 -142% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
58
24
读取速度,GB/s
4,025.3
15.6
写入速度,GB/s
2,107.0
12.1
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
670
2852
Micron Technology 18HTF12872AY-800F1 1GB RAM的比较
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5469-045.A00LF 4GB
Corsair CMV16GX4M1A2133C15 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
SK Hynix HMT31GR7CFR4C-PB 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Crucial Technology CT51264BA1339.D16F 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMU16GX4M2A2666C16 8GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMW64GX4M8C3000C15 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMH16GX4M2E3200C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kllisre M378A1K43BB2-CRC 8GB
Samsung M393B5270CH0-CH9 4GB
Kingston KGTWW1-MIE 4GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Unifosa Corporation HU564404EP0200 4GB
Kingston 99U5700-028.A00G 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
报告一个错误
×
Bug description
Source link