RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Compare
Micron Technology 4ATF51264AZ-2G6E1 4GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB
Overall score
Micron Technology 4ATF51264AZ-2G6E1 4GB
Overall score
Micron Technology 4ATF51264AZ-3G2E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 4ATF51264AZ-2G6E1 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
48
Around 29% lower latency
Faster write speed, GB/s
12.1
8.3
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264AZ-3G2E1 4GB
Report a bug
Faster reading speed, GB/s
17.5
16.4
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
34
48
Read speed, GB/s
16.4
17.5
Write speed, GB/s
12.1
8.3
Memory bandwidth, mbps
21300
25600
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2616
2196
Micron Technology 4ATF51264AZ-2G6E1 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-4000C17-8GTZRB 8GB
Samsung M393B1K70QB0-CK0 8GB
Avant Technology J641GU42J5213N0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD64GX4M4B2800C14 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SK Hynix HMA81GU6AFR8N-UH 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Essencore Limited KD4AGU880-36A180U 16GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M391A1G43EB1-CRC 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston KHX21334D4/8G 8GB
A-DATA Technology DDR2 800G 2GB
Samsung M378A2K43EB1-CWE 16GB
AMD AE34G2139U2 4GB
Kingston MSI32D4S2S1ME-8 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Kingston 9905403-090.A01LF 4GB
Kingston 99U5663-006.A00G 16GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3333C16-4GRRD 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
Report a bug
×
Bug description
Source link