RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4000C18-32GTZR 32GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-4000C18-32GTZR 32GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
G Skill Intl F4-4000C18-32GTZR 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
G Skill Intl F4-4000C18-32GTZR 32GB
Report a bug
Below the latency in the PassMark tests, ns
33
51
Around -55% lower latency
Faster reading speed, GB/s
18.1
15.6
Average value in the tests
Faster write speed, GB/s
14.7
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4000C18-32GTZR 32GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
33
Read speed, GB/s
15.6
18.1
Write speed, GB/s
11.8
14.7
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2687
3596
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C18-32GTZR 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Kingston 9905403-444.A00LF 4GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Kingston 9905471-002.A00LF 2GB
Kingston KHX2400C1C14/16G 16GB
SpecTek Incorporated ?????????????????? 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Apacer Technology 78.C1GS7.AUC0B 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Crucial Technology CT102464BF160B.C16 8GB
Kingston 9965600-005.A00G 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Panram International Corporation PUD42400C168GVS 8GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2400C15Z8GNT 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905678-029.A00G 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Transcend Information TS2GSH64V6B 16GB
SK Hynix HYMP112U64CP8-Y5 1GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.B1GM3.AF00B 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston KH280C14D4/8X 8GB
Report a bug
×
Bug description
Source link