RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Golden Empire CL16-16-16 D4-3200 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Golden Empire CL16-16-16 D4-3200 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Golden Empire CL16-16-16 D4-3200 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Golden Empire CL16-16-16 D4-3200 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
51
Around -104% lower latency
Faster reading speed, GB/s
18.6
15.6
Average value in the tests
Faster write speed, GB/s
14.3
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Golden Empire CL16-16-16 D4-3200 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
25
Read speed, GB/s
15.6
18.6
Write speed, GB/s
11.8
14.3
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
3413
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire CL16-16-16 D4-3200 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Golden Empire CL16-16-16 D4-3200 4GB
Crucial Technology CT102464BA160B.M16 8GB
Corsair CMZ16GX3M2A1600C9 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C16-4GVRB 4GB
Kingston 9905403-156.A00LF 2GB
Samsung M471A1K43DB1-CWE 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston KF2666C16D4/8G 8GB
Kingston HP26D4S9S1ME-4 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Corsair CML8GX3M2A1600C9 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston KHX2400C15/8G 8GB
Mushkin 991679ES 996679ES 2GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Asgard VMA41UG-MEC1U2AW1 8GB
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Report a bug
×
Bug description
Source link