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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Jinyu 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Jinyu 16GB

Overall score
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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Overall score
star star star star star
Jinyu 16GB

Jinyu 16GB

Differences Specifications Comments

Differences

Micron Technology 8ATF2G64HZ-3G2E2 16GB Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
  • Higher memory bandwidth, mbps
    25600 left arrow 21300
    Around 1.2% higher bandwidth
Jinyu 16GB Reasons to consider
Jinyu 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    21 left arrow 51
    Around -143% lower latency
  • Faster reading speed, GB/s
    17.3 left arrow 15.6
    Average value in the tests
  • Faster write speed, GB/s
    12.9 left arrow 11.8
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Jinyu 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    51 left arrow 21
  • Read speed, GB/s
    15.6 left arrow 17.3
  • Write speed, GB/s
    11.8 left arrow 12.9
  • Memory bandwidth, mbps
    25600 left arrow 21300
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2687 left arrow 3209

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Jinyu 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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