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Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Samsung M471A2K43CB1-CRC 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB vs Samsung M471A2K43CB1-CRC 16GB

Overall score
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Overall score
star star star star star
Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

Differences Specifications Comments

Differences

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB Reasons to consider
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 38
    Around 26% lower latency
  • Faster write speed, GB/s
    9.3 left arrow 9.1
    Average value in the tests
Samsung M471A2K43CB1-CRC 16GB Reasons to consider
Samsung M471A2K43CB1-CRC 16GB
Report a bug
  • Faster reading speed, GB/s
    13.8 left arrow 12.2
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Samsung M471A2K43CB1-CRC 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 38
  • Read speed, GB/s
    12.2 left arrow 13.8
  • Write speed, GB/s
    9.3 left arrow 9.1
  • Memory bandwidth, mbps
    19200 left arrow 19200
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2382 left arrow 2404

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB

Samsung M471A2K43CB1-CRC 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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