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Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Samsung M471A2K43CB1-CRC 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB vs Samsung M471A2K43CB1-CRC 16GB

总分
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

总分
star star star star star
Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

差异 规格 评论

差异

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB 需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 38
    左右 26% 更低的延时
  • 更快的写入速度，GB/s
    9.3 left arrow 9.1
    测试中的平均数值
Samsung M471A2K43CB1-CRC 16GB 需要考虑的原因
Samsung M471A2K43CB1-CRC 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.8 left arrow 12.2
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Samsung M471A2K43CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 38
  • 读取速度，GB/s
    12.2 left arrow 13.8
  • 写入速度，GB/s
    9.3 left arrow 9.1
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2382 left arrow 2404

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB

Samsung M471A2K43CB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
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内存RAM
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内存RAM
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内存RAM
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