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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB 需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
报告一个错误

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    16.7 left arrow 12.2
  • 写入速度，GB/s
    11.8 left arrow 9.3
  • 内存带宽，mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 2382

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB RAM的比较

SK Hynix HMA82GS6JJR8N-VK 16GB
RAM Latency Calculator
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最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
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A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-4266C19-32GTZR 32GB
G Skill Intl F4-4266C19-32GTZR 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Apacer Technology 78.CAGP7.4020B 8GB
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Team Group Inc. UD5-6400 16GB
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Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-2400C15-8GNS 8GB
G Skill Intl F4-2400C15-8GNS 8GB
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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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Apacer Technology D12.2755BS.001 16GB
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Kingston MSI16D3LS1MNG/8G 8GB
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Corsair CM4X8GF2400C16N2 8GB
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Corsair CMK8GX4M2A2133C13 4GB
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Kingston 9905471-071.A00LF 8GB
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Samsung M393A1G43EB1-CRC 8GB
内存RAM
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Essencore Limited KD48GU88C-26N1600 8GB
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Samsung M391A2K43BB1-CPB 16GB
内存RAM
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Samsung M393B1G70BH0-YK0 8GB
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Crucial Technology CT4G4DFS8266.M8FG 4GB
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Kingston KHX1866C10D3/8G 8GB
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A-DATA Technology DDR3 1866 8GB
内存RAM
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Kingston KHX1600C9D3/8G 8GB
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Golden Empire CL17-17-17 D4-2400 16GB
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