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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung SF4721G4CKHH6DFSDS 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Samsung SF4721G4CKHH6DFSDS 8GB

Overall score
star star star star star
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Overall score
star star star star star
Samsung SF4721G4CKHH6DFSDS 8GB

Samsung SF4721G4CKHH6DFSDS 8GB

Differences Specifications Comments

Differences

Nanya Technology M2F4GH64CB8HB6N-CG 4GB Reasons to consider
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 31
    Around 16% lower latency
  • Faster reading speed, GB/s
    12.3 left arrow 10.4
    Average value in the tests
  • Faster write speed, GB/s
    7.1 left arrow 5.3
    Average value in the tests
Samsung SF4721G4CKHH6DFSDS 8GB Reasons to consider
Samsung SF4721G4CKHH6DFSDS 8GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung SF4721G4CKHH6DFSDS 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 31
  • Read speed, GB/s
    12.3 left arrow 10.4
  • Write speed, GB/s
    7.1 left arrow 5.3
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1952 left arrow 1740

Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM comparisons

SK Hynix HMT125U6DFR8C-H9 2GB
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Samsung SF4721G4CKHH6DFSDS 8GB RAM comparisons

Samsung M395T2863QZ4-CF76 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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