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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M378A2G43AB3-CWE 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Samsung M378A2G43AB3-CWE 16GB

Overall score
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Overall score
star star star star star
Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

Differences Specifications Comments

Differences

Nanya Technology M2N1G64TUH8D5F-AC 1GB Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
  • Faster reading speed, GB/s
    2 left arrow 17.6
    Average value in the tests
Samsung M378A2G43AB3-CWE 16GB Reasons to consider
Samsung M378A2G43AB3-CWE 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 92
    Around -163% lower latency
  • Faster write speed, GB/s
    12.1 left arrow 1,266.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M378A2G43AB3-CWE 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    92 left arrow 35
  • Read speed, GB/s
    2,105.4 left arrow 17.6
  • Write speed, GB/s
    1,266.1 left arrow 12.1
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    339 left arrow 3221

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

Samsung M378A2G43AB3-CWE 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M378A2G43AB3-CWE 16GB
Samsung M378A2G43AB3-CWE 16GB
Memory RAM
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Corsair CMW32GX4M2D3600C18 16GB
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G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Corsair CM4X16GE2666C16K8 16GB
Corsair CM4X16GE2666C16K8 16GB
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Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
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Crucial Technology CT51264BA1339.C16F 4GB
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Samsung M471B1G73QH0-YK0 8GB
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SK Hynix HMA41GU6AFR8N-TF 8GB
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Golden Empire CL15-17-17 D4-3000 8GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Gloway International (HK) STKD4GAM2400-F 8GB
Gloway International (HK) STKD4GAM2400-F 8GB
Memory RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Memory RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KVR26N19D8/16 16GB
Kingston KVR26N19D8/16 16GB
Memory RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Memory RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Memory RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C15-8GTZSK 8GB
G Skill Intl F4-3200C15-8GTZSK 8GB
Memory RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M378A4G43AB2-CVF 32GB
Memory RAM