RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Compare
Nanya Technology M2S4G64CB8HB5N-CG 4GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Overall score
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
73
Around 60% lower latency
Faster write speed, GB/s
8.1
7.9
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Report a bug
Faster reading speed, GB/s
15.1
9.9
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
73
Read speed, GB/s
9.9
15.1
Write speed, GB/s
8.1
7.9
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1691
1724
Nanya Technology M2S4G64CB8HB5N-CG 4GB RAM comparisons
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-515.A00LF 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-3733C17-4GVK 4GB
Samsung M393B1K70QB0-CK0 8GB
Apacer Technology 78.BAGSR.4030B 4GB
Peak Electronics 256X64M-67E 2GB
Kingston KYXC0V-MID 16GB
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Kingston 99U5471-020.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
AMD R534G1601U1S-UO 4GB
A-DATA Technology DDR4 3200 8GB
Kingston KF552C40-16 16GB
Corsair CMW16GX4M2K4266C19 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Apacer Technology 76.B305G.D500B 4GB
Kingston KHX1866C9D3/8GX 8GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Samsung M378B5273DH0-CH9 4GB
Kingston 9905598-009.A00G 8GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
AMD R538G1601U2S 8GB
Kingston 9905625-066.A00G 16GB
Report a bug
×
Bug description
Source link