Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 16ATF2G64HZ-3G2E1 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB vs Micron Technology 16ATF2G64HZ-3G2E1 16GB

Overall score
star star star star star
Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Overall score
star star star star star
Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Differences

  • Faster reading speed, GB/s
    3 left arrow 16.7
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    35 left arrow 54
    Around -54% lower latency
  • Faster write speed, GB/s
    15.1 left arrow 1,308.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 5300
    Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    54 left arrow 35
  • Read speed, GB/s
    3,573.5 left arrow 16.7
  • Write speed, GB/s
    1,308.1 left arrow 15.1
  • Memory bandwidth, mbps
    5300 left arrow 25600
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    371 left arrow 3191
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons