RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Micron Technology 16ATF2G64HZ-3G2E1 16GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
16.7
Average value in the tests
Reasons to consider
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
54
Around -54% lower latency
Faster write speed, GB/s
15.1
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
35
Read speed, GB/s
3,573.5
16.7
Write speed, GB/s
1,308.1
15.1
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
371
3191
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB RAM comparisons
PNY Electronics PNY 2GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2Y51264TU88B0B-3C 512MB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
G Skill Intl F5-6400J3239G16G 16GB
Kingston KF3600C18D4/32GX 32GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-3200C16-8GSXKB 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M378A4G43MB1-CTD 32GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905678-065.A00G 8GB
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-4400C19-8GTZKK 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-16GTZSK 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMK16GX4M2L3200C16 8GB
A-DATA Technology DQVE1908 512MB
Samsung SH5724G4UNC26P2-SC 32GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL8G26C16U4B.8FE 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
SK Hynix HMT425S6CFR6A-PB 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Report a bug
×
Bug description
Source link