RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Compare
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Micron Technology 18ASF2G72AZ-2G1B1 16GB
Overall score
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Overall score
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Report a bug
Faster reading speed, GB/s
4
14.2
Average value in the tests
Reasons to consider
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
64
Around -121% lower latency
Faster write speed, GB/s
8.9
2,256.8
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
64
29
Read speed, GB/s
4,651.3
14.2
Write speed, GB/s
2,256.8
8.9
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
837
2909
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM comparisons
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB RAM comparisons
Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Protocol Engines Kingrock 800 2GB 2GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
Avant Technology F641GU67F9333G 8GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Kingston 9905403-061.A00LF 2GB
Apacer Technology 76.D305G.D390B 16GB
Samsung M391B5673EH1-CH9 2GB
Kingston 99U5734-036.A00G 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
Kingston 9905474-019.A00LF 2GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Kingston 9905458-017.A01LF 4GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
Samsung M378B5273CH0-CH9 4GB
Kingston 9965639-002.A01G 8GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston X2YH1K-MIE-NX 16GB
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMK16GX4M2Z3600C18 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Samsung M471B5273EB0-CK0 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB
Report a bug
×
Bug description
Source link