Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M378A1K43BB1-CTD 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Samsung M378A1K43BB1-CTD 16GB

Overall score
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Overall score
star star star star star
Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB

Differences

  • Faster reading speed, GB/s
    4 left arrow 17.3
    Average value in the tests
  • Faster write speed, GB/s
    2,256.8 left arrow 13.4
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    31 left arrow 64
    Around -106% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M378A1K43BB1-CTD 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    64 left arrow 31
  • Read speed, GB/s
    4,651.3 left arrow 17.3
  • Write speed, GB/s
    2,256.8 left arrow 13.4
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    837 left arrow 2762
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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