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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M393A2G40EB2-CTD 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Samsung M393A2G40EB2-CTD 16GB

Overall score
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Overall score
star star star star star
Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

Differences Specifications Comments

Differences

Nanya Technology NT4GC64B8HG0NS-CG 4GB Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    42 left arrow 44
    Around 5% lower latency
  • Faster reading speed, GB/s
    9.7 left arrow 8.5
    Average value in the tests
  • Faster write speed, GB/s
    6.0 left arrow 5.6
    Average value in the tests
Samsung M393A2G40EB2-CTD 16GB Reasons to consider
Samsung M393A2G40EB2-CTD 16GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M393A2G40EB2-CTD 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    42 left arrow 44
  • Read speed, GB/s
    9.7 left arrow 8.5
  • Write speed, GB/s
    6.0 left arrow 5.6
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    1396 left arrow 1660

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Samsung M393A2G40EB2-CTD 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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