RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471A1K43DB1-CWE 8GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Samsung M471A1K43DB1-CWE 8GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Samsung M471A1K43DB1-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
Samsung M471A1K43DB1-CWE 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
42
Around -27% lower latency
Faster reading speed, GB/s
16.1
9.7
Average value in the tests
Faster write speed, GB/s
13.0
6.0
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471A1K43DB1-CWE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
33
Read speed, GB/s
9.7
16.1
Write speed, GB/s
6.0
13.0
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1396
2987
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Samsung M471A1K43DB1-CWE 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMD16GX3M2A1600C7 8GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Strontium EVMT8G1600U86S 8GB
Essencore Limited IM48GU48N21-FFFHM 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston X5H5PW-MIE 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
AMD R5316G1609U2K 8GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953EZ3-CF7 1GB
Samsung M378B5773DH0-CH9 2GB
Samsung M378A1K43DB2-CTD 8GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905744-011.A00G 32GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CM4X16GE2666C16K8 16GB
Crucial Technology CT25664AA800.M16FG 2GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA451R7AFR8N-TF 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Report a bug
×
Bug description
Source link