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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

Overall score
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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Overall score
star star star star star
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Differences Specifications Comments

Differences

Nanya Technology NT4GC72B4NA1NL-CG 4GB Reasons to consider
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    42 left arrow 45
    Around 7% lower latency
  • Higher memory bandwidth, mbps
    10600 left arrow 1900
    Around 5.58% higher bandwidth
Micron Technology 18ASF1G72PZ-2G3B1 8GB Reasons to consider
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Report a bug
  • Faster reading speed, GB/s
    11.7 left arrow 10.6
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 7.8
    Average value in the tests

Specifications

Complete list of technical specifications
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    42 left arrow 45
  • Read speed, GB/s
    10.6 left arrow 11.7
  • Write speed, GB/s
    7.8 left arrow 8.4
  • Memory bandwidth, mbps
    10600 left arrow 1900
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow no data
  • Ranking PassMark (The more the better)
    2150 left arrow 2387

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM comparisons

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB RAM comparisons

Smart Modular SH564128FH8NZQNSCG 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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