RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
16.6
Average value in the tests
Reasons to consider
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
63
71
Around -13% lower latency
Faster write speed, GB/s
8.2
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
63
Read speed, GB/s
2,831.6
16.6
Write speed, GB/s
1,322.6
8.2
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
399
1863
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-444.A00LF 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingston KDK8NX-MIE 16GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C16-16GTZRC 16GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston CBD32D4S2S1ME-8 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
V-GEN D4R8GL24A8R 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9965600-011.A01G 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Kingston 9905403-134.A00LF 2GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston HP26D4S9S8MH-8 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMK16GX4M2Z2400C16 8GB
Kingston KHX3200C18D4/8G 8GB
Corsair CMU32GX4M2C3000C16 16GB
Report a bug
×
Bug description
Source link