RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMT64GX4M8C3200C16 8GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Corsair CMT64GX4M8C3200C16 8GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Corsair CMT64GX4M8C3200C16 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
15.2
Average value in the tests
Reasons to consider
Corsair CMT64GX4M8C3200C16 8GB
Report a bug
Below the latency in the PassMark tests, ns
39
71
Around -82% lower latency
Faster write speed, GB/s
14.8
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMT64GX4M8C3200C16 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
39
Read speed, GB/s
2,831.6
15.2
Write speed, GB/s
1,322.6
14.8
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
399
2878
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Corsair CMT64GX4M8C3200C16 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMT32GX4M4K4000C19 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston 9905630-031.A00G 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M474A2K43BB1-CPB 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMT64GX4M8C3200C16 8GB
AMD R5S38G1601U2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston KHX4800C19D4/8GX 8GB
AMD AE34G2139U2 4GB
Apacer Technology 78.DAGP2.4030B 16GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905744-035.A00G 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMA82GR8AMR4N-TF 16GB
Kingston 9965525-155.A00LF 8GB
Essencore Limited KD4AGU880-32A160T 16GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMR16GX4M2Z2933C16 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston ACR32D4S2S1ME-8 8GB
Report a bug
×
Bug description
Source link