RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology 18ADF2G72AZ-2G6E1 16GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
18
Average value in the tests
Reasons to consider
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Report a bug
Below the latency in the PassMark tests, ns
64
71
Around -11% lower latency
Faster write speed, GB/s
8.5
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
64
Read speed, GB/s
2,831.6
18.0
Write speed, GB/s
1,322.6
8.5
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
399
2197
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3000C15-16GVR 16GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-3000C16-8GTZN 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston 9905624-036.A00G 8GB
Kingston 9905403-011.A03LF 2GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Corsair CMV16GX4M1A2400C16 16GB
Corsair CMK8GX4M1A2400C14 8GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Kingston 9905316-106.A02LF 1GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BL16G26C16U4B.16FD 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Report a bug
×
Bug description
Source link