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Nanya Technology NT512T64U88B0BY-3C 512MB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
15.6
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster write speed, GB/s
6.4
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
71
Read speed, GB/s
2,831.6
15.6
Write speed, GB/s
1,322.6
6.4
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
399
1650
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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