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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Overall score
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Differences Specifications Comments

Differences

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    19 left arrow 35
    Around -84% lower latency
  • Faster reading speed, GB/s
    19.5 left arrow 13.7
    Average value in the tests
  • Faster write speed, GB/s
    15.8 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 19
  • Read speed, GB/s
    13.7 left arrow 19.5
  • Write speed, GB/s
    9.6 left arrow 15.8
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2312 left arrow 3435

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB RAM comparisons

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