RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Compare
PNY Electronics PNY 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Overall score
PNY Electronics PNY 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
32
Around 16% lower latency
Faster reading speed, GB/s
13.8
11.3
Average value in the tests
Faster write speed, GB/s
8.4
7.6
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
32
Read speed, GB/s
13.8
11.3
Write speed, GB/s
8.4
7.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2274
2292
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB RAM comparisons
Crucial Technology CT51264BD160B.C16F 4GB
Kingston ACR16D3LS1NGG/2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KHX2133C11D3/4GX 4GB
Kingston XRGM6C-MIE 16GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3300C16-8GTZKW 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Kingston 9905403-061.A00LF 2GB
Corsair CM4X8GF2400C16S4 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M378A1K43DB2-CVF 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
Kingston KF552C40-16 16GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology W642GU42J5213N 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Apacer Technology 78.CAGQE.C750B 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CM4X8GF3000C15K4 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Report a bug
×
Bug description
Source link